? semiconductor components industries, llc, 2003 december, 2003 ? rev. 1 1 publication order number: MMBTA06WT1/d MMBTA06WT1 driver transistor npn silicon moisture sensitivity level: 1 esd rating: human body model ? 4 kv esd rating: machine model ? 400 v features ? pb?free package may be available. the g?suffix denotes a pb?free lead finish maximum ratings rating symbol value unit collector?emitter voltage v ceo 80 vdc collector?base voltage v cbo 80 vdc emitter?base voltage v ebo 4.0 vdc collector current ? continuous i c 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr?5 board t a = 25 c p d 150 mw thermal resistance, junction to ambient r ja 833 c/w junction and storage temperature t j , t stg ?55 to +150 c device package shipping 2 ordering information MMBTA06WT1 sc?70 sc?70 case 419 style 3 3000/t ape & reel 2 3 1 marking diagram gm d gm = specific device code d = date code collector 3 1 base 2 emitter http://onsemi.com MMBTA06WT1g sc?70 (pb?free) 3000/t ape & reel 2 for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
MMBTA06WT1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown v oltage (note 1) (i c = 1.0 madc, i b = 0) v (br)ceo 80 ? vdc emitter?base breakdown voltage (i e = 100 adc, i c = 0) v (br)ebo 4.0 ? vdc collector cutoff current (v ce = 60 vdc, i b = 0) i ces ? 0.1 adc collector cutoff current (v cb = 80 vdc, i e = 0) i cbo ? 0.1 adc on characteristics dc current gain (i c = 10 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 100 100 ? ? ? collector? emitter saturation v oltage (i c = 100 madc, i b = 10 madc) v ce(sat) ? 0.25 vdc base?emitter on voltage (i c = 100 madc, v ce = 1.0 vdc) v be(on) ? 1.2 vdc small?signal characteristics current? gain ? bandwidth product (note 2) (i c = 10 ma, v ce = 2.0 v, f = 100 mhz) f t 100 ? mhz 1. pulse test: pulse width 300 s, duty cycle 2.0%. 2. f t is defined as the frequency at which |h fe | extrapolates to unity. figure 1. switching time test circuits output turn-on time -1.0 v v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 0 +10 v 5.0 s output turn-off time +v bb v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 5.0 s *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities
MMBTA06WT1 http://onsemi.com 3 figure 2. current?gain e bandwidth product figure 3. capacitance figure 4. switching time 100 200 2.0 i c , collector current (ma) 300 200 100 70 50 30 10 100 0.1 v r , reverse voltage (volts) 80 60 40 20 10 8.0 20 v ce = 2.0 v t j = 25 c t j = 25 c 3.0 5.0 7.0 10 20 30 50 70 f t , current-gain - bandwidth product (mhz ) 50 1.0 2.0 5.0 0.2 0.5 6.0 4.0 c ibo c obo 20 10 i c , collector current (ma) 200 100 50 20 10 100 t, time (ns) 50 200 500 1.0 k 500 v cc = 40 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f t r 5.0 7.0 30 70 300 700 30 70 t d @ v be(off) = 0.5 v c, capacitance (pf) 300 figure 5. active?region safe operating area 10 1.0 v ce , collector-emitter voltage (volts) 500 200 100 50 20 10 30 i c , collector current (ma) 2.0 5.0 50 1.0 k 1.0 ms 1.0 s t a = 25 c current limit thermal limit second breakdown limit 100 70 20 3.0 7.0 100 s t c = 25 c 700 300 30 70 figure 6. dc current gain 2.0 500 0.5 i c , collector current (ma) 400 200 100 80 60 40 10 , dc current gain t j = 125 c 1.0 3.0 5.0 v ce = 1.0 v 20 100 30 50 200 300 h fe 25 c -55 c figure 7. aono voltages 10 500 1.0 i c , collector current (ma) 1.0 0.8 0.6 0.4 0.2 0 100 t j = 25 c v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v 0.5 2.0 5.0 200 20 50
MMBTA06WT1 http://onsemi.com 4 figure 8. collector saturation region figure 9. base?emitter temperature coefficient 100 500 0.5 i c , collector current (ma) -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 0.1 10 0.05 i b , base current (ma) 1.0 0.8 0.6 0.4 0.2 0 1.0 t j = 25 c r vb , temperature coefficient (mv/ c) 10 r vb for v be 50 i c = 100 ma i c = 50 ma i c = 250 ma i c = 500 ma i c = 10 ma , collector-emitter voltage (volts) v ce 1.0 2.0 5.0 20 50 200 20 2.0 5.0 0.2 0.5
MMBTA06WT1 http://onsemi.com 5 package dimensions c n a l d g s b h j k 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.032 0.040 0.80 1.00 d 0.012 0.016 0.30 0.40 g 0.047 0.055 1.20 1.40 h 0.000 0.004 0.00 0.10 j 0.004 0.010 0.10 0.25 k 0.017 ref 0.425 ref l 0.026 bsc 0.650 bsc n 0.028 ref 0.700 ref s 0.079 0.095 2.00 2.40 0.05 (0.002) style 3: pin 1. base 2. emitter 3. collector sc?70/sot?323 case 419?04 issue l figure 10. sc?70/sot?323 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint*
MMBTA06WT1 http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different a pplications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical e xperts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc prod uct could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney f ees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was neglig ent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MMBTA06WT1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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